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Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation
GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap. In this study, the structural and photoelectric characteristic...
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| Vydáno v: | Nanomaterials (Basel) |
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| Hlavní autoři: | , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7075233/ https://ncbi.nlm.nih.gov/pubmed/32079269 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10020340 |
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