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Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants
Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1–15 at.%. Polarity inversion from Al-polar to...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7062775/ https://ncbi.nlm.nih.gov/pubmed/32152367 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-61285-8 |
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