Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe(0.66)Dy(0.24)Tb(0.1))(3)O(7-x) (FDTO), which shows semiconducting behavior with reasona...

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Publicat a:Sci Rep
Autors principals: Taz, Humaira, Prasad, Bhagwati, Huang, Yen-Lin, Chen, Zuhuang, Hsu, Shang-Lin, Xu, Ruijuan, Thakare, Vishal, Sakthivel, Tamil Selvan, Liu, Chenze, Hettick, Mark, Mukherjee, Rupam, Seal, Sudipta, Martin, Lane W., Javey, Ali, Duscher, Gerd, Ramesh, Ramamoorthy, Kalyanaraman, Ramki
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2020
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC7046697/
https://ncbi.nlm.nih.gov/pubmed/32107393
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-58592-5
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