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Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics
A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe(0.66)Dy(0.24)Tb(0.1))(3)O(7-x) (FDTO), which shows semiconducting behavior with reasona...
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| Publicado en: | Sci Rep |
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| Main Authors: | , , , , , , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7046697/ https://ncbi.nlm.nih.gov/pubmed/32107393 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-58592-5 |
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