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Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications
Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal–oxide–semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge storage, and charge transfer to the sensing node. To prove...
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| Publicado en: | Sensors (Basel) |
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| Main Authors: | , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2020
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7038367/ https://ncbi.nlm.nih.gov/pubmed/32012978 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s20030727 |
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