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High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga(2)O(3) Heterojunction
Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electro...
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| Udgivet i: | Nanoscale Res Lett |
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| Main Authors: | , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2020
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7036083/ https://ncbi.nlm.nih.gov/pubmed/32088767 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-3271-9 |
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