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Electric-Controlled Valley Pseudomagnetoresistance in Graphene with Y-Shaped Kekulé Lattice Distortion

We propose a new method for regulating valley pseudomagnetoresistance in ballistic graphene-based valley field-effect transistors by taking into account the Y-shaped Kekulé lattice distortion and electric barrier. The device involves valley injection and valley detection by ferromagnetic-strain sour...

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Dades bibliogràfiques
Publicat a:Nanoscale Res Lett
Autors principals: Wu, Qing-Ping, Chang, Lu-Lu, Li, Yu-Zeng, Liu, Zheng-Fang, Xiao, Xian-Bo
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2020
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC7031462/
https://ncbi.nlm.nih.gov/pubmed/32076846
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-3275-5
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