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Improving Output Power of InGaN Laser Diode Using Asymmetric In(0.15)Ga(0.85)N/In(0.02)Ga(0.98)N Multiple Quantum Wells
Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in the three In(0.15)Ga(0.85)N/In(0.02)Ga(0.98)N quantu...
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| Publicat a: | Micromachines (Basel) |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6952886/ https://ncbi.nlm.nih.gov/pubmed/31847087 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10120875 |
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