A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain: A Hall Effect and Raman Study

Utilizing the intrinsic mobility–strain relationship in semiconductors is critical for enabling strain engineering applications in high‐performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are re...

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Publicat a:Adv Sci (Weinh)
Autors principals: Choi, Hyun Ho, Yi, Hee Taek, Tsurumi, Junto, Kim, Jae Joon, Briseno, Alejandro L., Watanabe, Shun, Takeya, Jun, Cho, Kilwon, Podzorov, Vitaly
Format: Artigo
Idioma:Inglês
Publicat: John Wiley and Sons Inc. 2019
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Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6947506/
https://ncbi.nlm.nih.gov/pubmed/31921560
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201901824
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