A carregar...

Study on In-Doped CdMgTe Crystals Grown by a Modified Vertical Bridgman Method Using the ACRT Technique

Cadmium–magnesium–telluride (CdMgTe) crystal was regarded as a potential semiconductor material. In this paper, an indium-doped Cd(0.95)Mg(0.05)Te ingot with 30 mm diameter and 120 mm length grown by a modified Bridgman method with excess Te condition was developed for room temperature gamma-ray det...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Yu, Pengfei, Jiang, Biru, Chen, Yongren, Zheng, Jiahong, Luan, Lijun
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2019
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6947041/
https://ncbi.nlm.nih.gov/pubmed/31861186
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12244236
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!