Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)

Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number https://doi.org/10.1002/advs.201901841, Ivan P. Parkin, Stefan A. Maier, and co‐workers show how photo‐induced enhanced Raman spectroscopy...

Descrizione completa

Salvato in:
Dettagli Bibliografici
Pubblicato in:Adv Sci (Weinh)
Autori principali: Glass, Daniel, Cortés, Emiliano, Ben‐Jaber, Sultan, Brick, Thomas, Peveler, William J., Blackman, Christopher S., Howle, Christopher R., Quesada‐Cabrera, Raul, Parkin, Ivan P., Maier, Stefan A.
Natura: Artigo
Lingua:Inglês
Pubblicazione: John Wiley and Sons Inc. 2019
Soggetti:
Inside Front Cover
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC6864991/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201970132
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !

Documenti analoghi