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A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions

Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homog...

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Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Janipour, Mohsen, Misirlioglu, I. Burc, Sendur, Kursat
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2019
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6695625/
https://ncbi.nlm.nih.gov/pubmed/31362342
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12152412
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