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A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions

Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homog...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Materials (Basel)
Päätekijät: Janipour, Mohsen, Misirlioglu, I. Burc, Sendur, Kursat
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI 2019
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC6695625/
https://ncbi.nlm.nih.gov/pubmed/31362342
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12152412
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