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A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions
Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homog...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6695625/ https://ncbi.nlm.nih.gov/pubmed/31362342 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12152412 |
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