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Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States
A new design for high density integration greater than gigabits of perpendicular-magnetic-tunnel-junction (p-MTJ) spin-valve, called the double pinned (i.e., bottom and top pinned structures) p-MTJ spin-valve achieved a multi-level memory-cell operation exhibiting four-level resistances. Three key m...
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| Veröffentlicht in: | Sci Rep |
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| Hauptverfasser: | , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group UK
2019
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6695488/ https://ncbi.nlm.nih.gov/pubmed/31417114 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-48311-0 |
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