Quick Optical Identification of the Defect Formation in Monolayer WSe(2) for Growth Optimization

Bottom-up epitaxy has been widely applied for transition metal dichalcogenides (TMDCs) growth. However, this method usually leads to a high density of defects in the crystal, which limits its optoelectronic performance. Here, we show the effect of growth temperature on the defect formation, optical...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Fang, Long, Chen, Haitao, Yuan, Xiaoming, Huang, Han, Chen, Gen, Li, Lin, Ding, Junnan, He, Jun, Tao, Shaohua
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2019
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6692796/
https://ncbi.nlm.nih.gov/pubmed/31414230
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3110-z
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