Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway

Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still...

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Pubblicato in:Sci Adv
Autori principali: Yao, Zizhu, Pan, Liang, Liu, Lizhen, Zhang, Jindan, Lin, Quanjie, Ye, Yingxiang, Zhang, Zhangjing, Xiang, Shengchang, Chen, Banglin
Natura: Artigo
Lingua:Inglês
Pubblicazione: American Association for the Advancement of Science 2019
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Research Articles
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC6677547/
https://ncbi.nlm.nih.gov/pubmed/31414048
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.aaw4515
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