Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides

Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in transmission electron microscopy studies. Consequently, unexpected optical, trans...

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Publicado no:Nat Commun
Main Authors: Barja, Sara, Refaely-Abramson, Sivan, Schuler, Bruno, Qiu, Diana Y., Pulkin, Artem, Wickenburg, Sebastian, Ryu, Hyejin, Ugeda, Miguel M., Kastl, Christoph, Chen, Christopher, Hwang, Choongyu, Schwartzberg, Adam, Aloni, Shaul, Mo, Sung-Kwan, Frank Ogletree, D., Crommie, Michael F., Yazyev, Oleg V., Louie, Steven G., Neaton, Jeffrey B., Weber-Bargioni, Alexander
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2019
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6662818/
https://ncbi.nlm.nih.gov/pubmed/31358753
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-019-11342-2
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