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Synaptic and Fast Switching Memristance in Porous Silicon-Based Structures
Memristors are two terminal electronic components whose conductance depends on the amount of charge that has flown across them over time. This dependence can be gradual, such as in synaptic memristors, or abrupt, as in resistive switching memristors. Either of these memory effects are very promising...
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| Publicado en: | Nanomaterials (Basel) |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2019
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6631600/ https://ncbi.nlm.nih.gov/pubmed/31159254 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9060825 |
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