Hu, B., Ochoa, E. D., Sanchez, D., Perron, J. K., Zimmerman, N. M., & Stewart, M. D. (2018). Effect of device design on charge offset drift in Si/SiO(2) single electron devices. J Appl Phys.
शिकागो स्टाइल उद्धरणHu, Binhui, Erick D. Ochoa, Daniel Sanchez, Justin K. Perron, Neil M. Zimmerman, और M. D. Stewart. "Effect of Device Design On Charge Offset Drift in Si/SiO(2) Single Electron Devices." J Appl Phys 2018.
एमएलए उद्धरणHu, Binhui, et al. "Effect of Device Design On Charge Offset Drift in Si/SiO(2) Single Electron Devices." J Appl Phys 2018.
चेतावनी: ये उद्धरण हमेशा 100% सटीक नहीं हो सकते हैं.