Hu, B., Ochoa, E. D., Sanchez, D., Perron, J. K., Zimmerman, N. M., & Stewart, M. D. (2018). Effect of device design on charge offset drift in Si/SiO(2) single electron devices. J Appl Phys.
Chicago Style citaatHu, Binhui, Erick D. Ochoa, Daniel Sanchez, Justin K. Perron, Neil M. Zimmerman, en M. D. Stewart. "Effect of Device Design On Charge Offset Drift in Si/SiO(2) Single Electron Devices." J Appl Phys 2018.
MLA citatieHu, Binhui, et al. "Effect of Device Design On Charge Offset Drift in Si/SiO(2) Single Electron Devices." J Appl Phys 2018.
Let op: Deze citaties zijn niet altijd 100% accuraat.