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Modulating Band Gap of Boron Doping in Amorphous Carbon Nano-Film
Amorphous carbon (a-C) films are attracting considerable attention to due their large optical band gap (E(opt)) range of 1–4 eV. But the hopping conducting mechanism of boron doping a-C (a-C:B) is still mysterious. To exploring the intrinsic reasons behind the semiconductor properties of a-C:B, in t...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6600733/ https://ncbi.nlm.nih.gov/pubmed/31159328 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12111780 |
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