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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6567103/ https://ncbi.nlm.nih.gov/pubmed/31096689 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12101599 |
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