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Silicon Quantum Dot Light Emitting Diode at 620 nm
Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air...
Tallennettuna:
| Julkaisussa: | Micromachines (Basel) |
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| Päätekijät: | , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI
2019
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6562877/ https://ncbi.nlm.nih.gov/pubmed/31083550 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10050318 |
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