Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure

Depending on the mobile species involved in the resistive switching process, redox random access memories and conductive bridge random access memories are widely studied with distinct switching mechanisms. Although the two resistance switching types have faithfully proved to be electrochemically lin...

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Shranjeno v:
Bibliografske podrobnosti
izdano v:Adv Sci (Weinh)
Main Authors: Chen, Xiaoli, Zeng, Kelin, Zhu, Xin, Ding, Guanglong, Zou, Ting, Zhang, Chen, Zhou, Kui, Zhou, Ye, Han, Su‐Ting
Format: Artigo
Jezik:Inglês
Izdano: John Wiley and Sons Inc. 2019
Teme:
Communications
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC6548956/
https://ncbi.nlm.nih.gov/pubmed/31179227
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201900213
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