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In(2)S(3) Quantum Dots: Preparation, Properties and Optoelectronic Application

Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In(2)S(3) quantum dots (QDs) at atmospheric pressure and room temperature...

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Shranjeno v:
Bibliografske podrobnosti
izdano v:Nanoscale Res Lett
Main Authors: Li, Rujie, Tang, Libin, Zhao, Qing, Ly, Thuc Hue, Teng, Kar Seng, Li, Yao, Hu, Yanbo, Shu, Chang, Lau, Shu Ping
Format: Artigo
Jezik:Inglês
Izdano: Springer US 2019
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC6517471/
https://ncbi.nlm.nih.gov/pubmed/31089901
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2992-0
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