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In(2)S(3) Quantum Dots: Preparation, Properties and Optoelectronic Application
Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In(2)S(3) quantum dots (QDs) at atmospheric pressure and room temperature...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6517471/ https://ncbi.nlm.nih.gov/pubmed/31089901 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2992-0 |
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