Large bandgap of pressurized trilayer graphene

Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graph...

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Detaylı Bibliyografya
Yayımlandı:Proc Natl Acad Sci U S A
Asıl Yazarlar: Ke, Feng, Chen, Yabin, Yin, Ketao, Yan, Jiejuan, Zhang, Hengzhong, Liu, Zhenxian, Tse, John S., Wu, Junqiao, Mao, Ho-kwang, Chen, Bin
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: National Academy of Sciences 2019
Konular:
Physical Sciences
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC6511052/
https://ncbi.nlm.nih.gov/pubmed/31004055
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1820890116
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