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Investigation of Electrical Stability and Sensitivity of Electric Double Layer Gated Field-Effect Transistors (FETs) for miRNA Detection

In this research, we developed a miRNA sensor using an electrical double layer (EDL) gated field-effect transistor (FET)-based biosensor with enhanced sensitivity and stability. We conducted an in-depth investigation of the mechanisms that give rise to fluctuations in the electrical signal, affectin...

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Dettagli Bibliografici
Pubblicato in:Sensors (Basel)
Autori principali: Kuo, Wen-Che, Sarangadharan, Indu, Pulikkathodi, Anil Kumar, Chen, Po-Hsuan, Wang, Shin-Li, Wu, Chang-Run, Wang, Yu-Lin
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI 2019
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Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC6479439/
https://ncbi.nlm.nih.gov/pubmed/30934691
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s19071484
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