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Boron–oxygen complex yields n-type surface layer in semiconducting diamond
Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits developme...
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| Vydáno v: | Proc Natl Acad Sci U S A |
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| Hlavní autoři: | , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
National Academy of Sciences
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6475370/ https://ncbi.nlm.nih.gov/pubmed/30936308 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1821612116 |
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