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Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. In this work, we investigate the probability of phonon emission as a functio...
Shranjeno v:
| izdano v: | PLoS One |
|---|---|
| Main Authors: | , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Public Library of Science
2019
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6472874/ https://ncbi.nlm.nih.gov/pubmed/30998702 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1371/journal.pone.0214971 |
| Oznake: |
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