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Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser
Heterostructure ReS(2)/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO(4) laser was demonstrated by employing heterostructure ReS(2)/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 ...
Tallennettuna:
| Julkaisussa: | Nanoscale Res Lett |
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| Päätekijät: | , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Springer US
2019
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6439101/ https://ncbi.nlm.nih.gov/pubmed/30923973 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2953-7 |
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