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Band Anti-Crossing Model in Dilute-As GaNAs Alloys
The band structure of the dilute-As GaNAs material is explained by the hybridization of localized As-impurity states with the valance band structure of GaN. Our approach employs the use of Density Functional Theory (DFT) calculated band structures, along with experimental results, to determine the l...
שמור ב:
| הוצא לאור ב: | Sci Rep |
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| Main Authors: | , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group UK
2019
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6435752/ https://ncbi.nlm.nih.gov/pubmed/30914672 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-41286-y |
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