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Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica
In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-coated fused silica substrate. The nanowires were grown catalyst-free using plasma-assisted molecular beam epitaxy (PA-MBE). The effect of growth condition on the morphology and quality of the nanowires is sys...
में बचाया:
| में प्रकाशित: | Nanoscale Res Lett |
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| मुख्य लेखकों: | , , , , , , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Springer US
2019
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6363810/ https://ncbi.nlm.nih.gov/pubmed/30721361 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2870-9 |
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