Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica

In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-coated fused silica substrate. The nanowires were grown catalyst-free using plasma-assisted molecular beam epitaxy (PA-MBE). The effect of growth condition on the morphology and quality of the nanowires is sys...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
में प्रकाशित:Nanoscale Res Lett
मुख्य लेखकों: Prabaswara, Aditya, Min, Jung-Wook, Subedi, Ram Chandra, Tangi, Malleswararao, Holguin-Lerma, Jorge A., Zhao, Chao, Priante, Davide, Ng, Tien Khee, Ooi, Boon S.
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: Springer US 2019
विषय:
Nano Express
ऑनलाइन पहुंच:https://ncbi.nlm.nih.gov/pmc/articles/PMC6363810/
https://ncbi.nlm.nih.gov/pubmed/30721361
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2870-9
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