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CdSe/ZnS quantum dot encapsulated MoS(2) phototransistor for enhanced radiation hardness

Notable progress achieved in studying MoS(2) based phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS(2) phototransistors in harsh environments is highly required. Here, we investigate effects of gamma...

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Bibliografiska uppgifter
I publikationen:Sci Rep
Huvudupphovsmän: Park, Jinwu, Yoo, Geonwook, Heo, Junseok
Materialtyp: Artigo
Språk:Inglês
Publicerad: Nature Publishing Group UK 2019
Ämnen:
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC6363733/
https://ncbi.nlm.nih.gov/pubmed/30723221
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-37902-y
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