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Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode
We fabricated a complex transparent conductive electrode (TCE) based on Ga(2)O(3) for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga(2)O(3), a 7 nm Ag, and a 15 nm Ga(2)O(3), forming a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) multilayer. The metal layer embedded...
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| Vydáno v: | Nanomaterials (Basel) |
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| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6358823/ https://ncbi.nlm.nih.gov/pubmed/30621281 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9010066 |
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