Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells

Ultra-thin and large-area silicon wafers with a thickness in the range of 20–70 μm, were produced by spalling using a nickel stressor layer. A new equation for predicting the thickness of the spalled silicon was derived from the Suo–Hutchinson mechanical model and the kinking mechanism. To confirm t...

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Bibliographische Detailangaben
Veröffentlicht in:Front Chem
Hauptverfasser: Yang, Hyun-Seock, Kim, Jiwon, Kim, Seil, Eom, Nu Si A., Kang, Sangmuk, Han, Chang-Soon, Kim, Sung Hae, Lim, Donggun, Lee, Jung-Ho, Park, Sung Heum, Choi, Jin Woo, Lee, Chang-Lyoul, Yoo, Bongyoung, Lim, Jae-Hong
Format: Artigo
Sprache:Inglês
Veröffentlicht: Frontiers Media S.A. 2019
Schlagworte:
Chemistry
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6339913/
https://ncbi.nlm.nih.gov/pubmed/30693277
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3389/fchem.2018.00600
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