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SnSe(2) Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity
SnSe(2) field-effect transistor was fabricated based on exfoliated few-layered SnSe(2) flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe(2) FET can achieve an on/off ratio as high as ~ 10(4) within 1 V...
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| Udgivet i: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2019
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6326916/ https://ncbi.nlm.nih.gov/pubmed/30627821 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2850-0 |
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