ALD-Zn(x)Ti(y)O as Window Layer in Cu(In,Ga)Se(2) Solar Cells

[Image: see text] We report on the application of Zn(x)Ti(y)O deposited by atomic layer deposition (ALD) as buffer layer in thin film Cu(In,Ga)Se(2) (CIGS) solar cells to improve the photovoltaic device performance. State-of-the-art CIGS devices employ a CdS/ZnO layer stack sandwiched between the ab...

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Détails bibliographiques
Publié dans:ACS Appl Mater Interfaces
Auteurs principaux: Löckinger, Johannes, Nishiwaki, Shiro, Andres, Christian, Erni, Rolf, Rossell, Marta D., Romanyuk, Yaroslav E., Buecheler, Stephan, Tiwari, Ayodhya N.
Format: Artigo
Langue:Inglês
Publié: American Chemical Society 2018
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC6302902/
https://ncbi.nlm.nih.gov/pubmed/30462473
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.8b14490
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