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Strain Conditions for the Inverse Heusler Type Fully Compensated Spin-Gapless Semiconductor Ti(2)MnAl: A First-Principles Study
In this work, we systematically studied the structural, electronic, magnetic, mechanical and thermodynamic properties of the fully compensated spin-gapless inverse Heusler Ti(2)MnAl compound under pressure strain condition by applying the first-principles calculation based on density functional theo...
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2018
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6266302/ https://ncbi.nlm.nih.gov/pubmed/30366417 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11112091 |
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