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Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators
We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as non...
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| Publicat a: | Sensors (Basel) |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6263913/ https://ncbi.nlm.nih.gov/pubmed/30400183 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s18113735 |
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