Site-controlled formation of single Si nanocrystals in a buried SiO(2) matrix using ion beam mixing

For future nanoelectronic devices – such as room-temperature single electron transistors – the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si(+) or Ne(+) ion beam mixing of Si into a bur...

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Detalhes bibliográficos
Publicado no:Beilstein J Nanotechnol
Main Authors: Xu, Xiaomo, Prüfer, Thomas, Wolf, Daniel, Engelmann, Hans-Jürgen, Bischoff, Lothar, Hübner, René, Heinig, Karl-Heinz, Möller, Wolfhard, Facsko, Stefan, von Borany, Johannes, Hlawacek, Gregor
Formato: Artigo
Idioma:Inglês
Publicado em: Beilstein-Institut 2018
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Full Research Paper
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6244365/
https://ncbi.nlm.nih.gov/pubmed/30498658
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.9.267
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