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Micro-accelerometer Based on Vertically Movable Gate Field Effect Transistor

A vertically movable gate field effect transistor (VMGFET) is proposed and demonstrated for a micro-accelerometer application. The VMGFET using air gap as an insulator layer allows the gate to move on the substrate vertically by external forces. Finite element analysis is used to simulate mechanical...

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Detalhes bibliográficos
Publicado no:Nanomicro Lett
Main Authors: Kang, Heung Seok, Lee, Kang-Hee, Yang, Dong-Youk, You, Byoung Hee, Song, In-Hyouk
Formato: Artigo
Idioma:Inglês
Publicado em: Springer Berlin Heidelberg 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6223902/
https://ncbi.nlm.nih.gov/pubmed/30464973
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s40820-015-0041-9
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