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Controllable Vapor Growth of Large-Area Aligned CdS(x)Se(1−x) Nanowires for Visible Range Integratable Photodetectors
The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS(x)Se(1−x) nanowires via ch...
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| Publicat a: | Nanomicro Lett |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer Berlin Heidelberg
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6199103/ https://ncbi.nlm.nih.gov/pubmed/30393706 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s40820-018-0211-7 |
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