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CH(3)NH(3)PbX(3) (X = I, Br) encapsulated in silicon carbide/carbon nanotube as advanced diodes
We employ first-principles density functional theory (DFT) calculations to study CH(3)NH(3)PbX(3) (X = I, Br) and its encapsulation into the silicon carbide nanotube and carbon nanotube (CNT). Our results indicate that these devices show diode behaviors which act on negative bias voltage but do not...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6185940/ https://ncbi.nlm.nih.gov/pubmed/30315191 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33668-5 |
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