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High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics

High-k dielectrics, materials having a large band gap (E(g)) and high dielectric constant (k) simultaneously, constitute critical components in microelectronic devices. Because of the inverse relationship between E(g) and k, materials with large values in both properties are rare. Therefore, massive...

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Foilsithe in:Sci Rep
Main Authors: Lee, Miso, Youn, Yong, Yim, Kanghoon, Han, Seungwu
Formáid: Artigo
Teanga:Inglês
Foilsithe: Nature Publishing Group UK 2018
Ábhair:
Rochtain Ar Líne:https://ncbi.nlm.nih.gov/pmc/articles/PMC6172237/
https://ncbi.nlm.nih.gov/pubmed/30287929
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33095-6
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