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High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics
High-k dielectrics, materials having a large band gap (E(g)) and high dielectric constant (k) simultaneously, constitute critical components in microelectronic devices. Because of the inverse relationship between E(g) and k, materials with large values in both properties are rare. Therefore, massive...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6172237/ https://ncbi.nlm.nih.gov/pubmed/30287929 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33095-6 |
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