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Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures an...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6170501/ https://ncbi.nlm.nih.gov/pubmed/30283024 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33198-0 |
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