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Robustness of Voltage-induced Magnetocapacitance

One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR w...

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Bibliografske podrobnosti
izdano v:Sci Rep
Main Authors: Kaiju, Hideo, Misawa, Takahiro, Nagahama, Taro, Komine, Takashi, Kitakami, Osamu, Fujioka, Masaya, Nishii, Junji, Xiao, Gang
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group UK 2018
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC6168469/
https://ncbi.nlm.nih.gov/pubmed/30279552
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33065-y
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