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Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa(2)O(4) Thin Films
A single-crystalline ZnGa(2)O(4) epilayer was successfully grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition. This epilayer was used as a ternary oxide semiconductor for application in high-performance metal–semiconductor–metal photoconductive deep-ultraviolet (DU...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6145910/ https://ncbi.nlm.nih.gov/pubmed/30232465 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-32412-3 |
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