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Direct Synthesis of Graphene on Silicon Oxide by low temperature Plasma Enhanced Chemical Vapor Deposition
Direct graphene growth on silicon with native oxide using Plasma enhanced Chemical Vapour Deposition at low temperatures [550 ºC -650 ºC] is demonstrated for the first time. It is shown that fine tuning of a two step synthesis with gas mixtures C(2)H(2)/H(2) yield monolayer and few layer graphene fi...
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| Publié dans: | Nanoscale |
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| Auteurs principaux: | , , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
2018
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6130772/ https://ncbi.nlm.nih.gov/pubmed/29946620 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1039/c8nr03210f |
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