Phase-transition–induced p-n junction in single halide perovskite nanowire

Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through...

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Bibliografiske detaljer
Udgivet i:Proc Natl Acad Sci U S A
Main Authors: Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., Yang, Peidong
Format: Artigo
Sprog:Inglês
Udgivet: National Academy of Sciences 2018
Fag:
Physical Sciences
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6130383/
https://ncbi.nlm.nih.gov/pubmed/30127004
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1806515115
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