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Phase-transition–induced p-n junction in single halide perovskite nanowire
Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through...
שמור ב:
| הוצא לאור ב: | Proc Natl Acad Sci U S A |
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| Main Authors: | , , , , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
National Academy of Sciences
2018
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6130383/ https://ncbi.nlm.nih.gov/pubmed/30127004 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1806515115 |
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