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Carrier Transport Properties of MoS(2) Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation

Over the past few years, two-dimensional materials have gained immense attention for next-generation electric sensing devices because of their unique properties. Here, we report the carrier transport properties of MoS(2) Schottky diodes under ambient as well as gas exposure conditions. MoS(2) field-...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Kim, Sun Jun, Park, Jae Young, Yoo, SangHyuk, Umadevi, Palanivel, Lee, Hyunpyo, Cho, Jinsoo, Kang, Keonwook, Jun, Seong Chan
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6123339/
https://ncbi.nlm.nih.gov/pubmed/30182283
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2652-9
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