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Robust midgap states in band-inverted junctions under electric and magnetic fields
Several IV–VI semiconductor compounds made of heavy atoms, such as Pb(1)(−x)Sn(x)Te, may undergo band-inversion at the L point of the Brillouin zone upon variation of their chemical composition. This inversion gives rise to topologically distinct phases, characterized by a change in a topological in...
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| Publicado no: | Beilstein J Nanotechnol |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Beilstein-Institut
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6009331/ https://ncbi.nlm.nih.gov/pubmed/29977675 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.9.133 |
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