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A “waiting” carbon nitride radical anion: a charge storage material and key intermediate in direct C–H thiolation of methylarenes using elemental sulfur as the “S”-source

Potassium poly(heptazine imide), a carbon nitride based semiconductor with high structural order and a valence band potential of +2.2 V vs. NHE, in the presence of hole scavengers and under visible light irradiation gives the corresponding polymeric radical anion, in which the specific density of un...

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Dades bibliogràfiques
Publicat a:Chem Sci
Autors principals: Savateev, Aleksandr, Kurpil, Bogdan, Mishchenko, Artem, Zhang, Guigang, Antonietti, Markus
Format: Artigo
Idioma:Inglês
Publicat: Royal Society of Chemistry 2018
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5935028/
https://ncbi.nlm.nih.gov/pubmed/29780491
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1039/c8sc00745d
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