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Scalability assessment of Group-IV mono-chalcogenide based tunnel FET
Selection of appropriate channel material is the key to design high performance tunnel field effect transistor (TFET), which promises to outperform the conventional metal oxide semiconductor field effect transistor (MOSFET) in ultra-low energy switching applications. Recently discovered atomically t...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5902579/ https://ncbi.nlm.nih.gov/pubmed/29662107 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-24209-1 |
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